METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that avoids a defect of a transfer pattern caused by a defect in charging a mask material in a pattern formed on a template in an imprinting method. SOLUTION: The template where a first recessed pattern is formed is br...

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Bibliographische Detailangaben
Hauptverfasser:	SHIOBARA HIDESHI, ITO SHINICHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that avoids a defect of a transfer pattern caused by a defect in charging a mask material in a pattern formed on a template in an imprinting method. SOLUTION: The template where a first recessed pattern is formed is brought into contact with the mask material formed on a substrate 11 to charge the mask material in the first recessed pattern, and the charged mask material is cured. The template is separated from the mask material to form a mask material pattern 20' on the substrate, radiation-sensitive resist is formed on the mask material pattern, and after the radiation-sensitive resist is irradiated selectively with radiation, the radiation-sensitive resist is developed to form a radiation-sensitive resist pattern 30' covering part of the mask material pattern. Then the mask material pattern and resist pattern are used as a mask to process the substrate. COPYRIGHT: (C)2010,JPO&INPIT