SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To promote the improvement of the quality of an SOD film in a high temperature oxidation atmosphere, and also to prevent the damage of elements under a liner film or a semiconductor substrate. SOLUTION: The semiconductor device includes a recess and a first liner film 4 and a s...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SHIMAMOTO KAZUMA, SUMIYA TOMOHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To promote the improvement of the quality of an SOD film in a high temperature oxidation atmosphere, and also to prevent the damage of elements under a liner film or a semiconductor substrate. SOLUTION: The semiconductor device includes a recess and a first liner film 4 and a second liner film 5 containing oxygen atoms, which are sequentially formed on the inner wall side face of the recess, and an insulation region filled in the recess. The oxygen resistance of the first liner film is superior to that of the second liner film. COPYRIGHT: (C)2010,JPO&INPIT