METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LASER DEVICE

PROBLEM TO BE SOLVED: To form a low-resistance and stable p-type electrode without a defect of contact between a semiconductor layer and an electrode material. SOLUTION: A method of manufacturing a nitride semiconductor device includes performing plasma treatment onto a surface of a nitride semicond...

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Bibliographische Detailangaben

Hauptverfasser:	OISHI TOSHIYUKI, SHIOZAWA KATSUOMI, KANEMOTO KYOZO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
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