METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LASER DEVICE
PROBLEM TO BE SOLVED: To form a low-resistance and stable p-type electrode without a defect of contact between a semiconductor layer and an electrode material. SOLUTION: A method of manufacturing a nitride semiconductor device includes performing plasma treatment onto a surface of a nitride semicond...
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To form a low-resistance and stable p-type electrode without a defect of contact between a semiconductor layer and an electrode material. SOLUTION: A method of manufacturing a nitride semiconductor device includes performing plasma treatment onto a surface of a nitride semiconductor layer 1, that is a layer to be treated, and performing alkali treatment onto an amorphous layer 2, that is formed by the plasma treatment, to form a treatment plane suitable for ohmic contact formation in a case where an electrode is formed. COPYRIGHT: (C)2010,JPO&INPIT |
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