METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device that reduces production of foreign matter, has high throughput, and is inexpensive. SOLUTION: In the method of manufacturing the semiconductor integrated circuit device, resist 20 is patterned on a s...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device that reduces production of foreign matter, has high throughput, and is inexpensive. SOLUTION: In the method of manufacturing the semiconductor integrated circuit device, resist 20 is patterned on a semiconductor substrate 11 where a semiconductor circuit 12 is formed by a nano-imprint method so as to form an opening in a scribe area S using a stamper 30. Then the semiconductor substrate 11 is etched using the resist 20 patterned on the semiconductor substrate 11 as a mask, and then the resist 20 is removed from the semiconductor substrate 11. Then the semiconductor substrate 11 having the resist 20 removed is fixed on a stage, and the semiconductor substrate 11 is diced through stealth dicing using a laser. COPYRIGHT: (C)2010,JPO&INPIT |
---|