METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device that reduces production of foreign matter, has high throughput, and is inexpensive. SOLUTION: In the method of manufacturing the semiconductor integrated circuit device, resist 20 is patterned on a s...

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Bibliographische Detailangaben
1. Verfasser: KAMON KAZUYA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device that reduces production of foreign matter, has high throughput, and is inexpensive. SOLUTION: In the method of manufacturing the semiconductor integrated circuit device, resist 20 is patterned on a semiconductor substrate 11 where a semiconductor circuit 12 is formed by a nano-imprint method so as to form an opening in a scribe area S using a stamper 30. Then the semiconductor substrate 11 is etched using the resist 20 patterned on the semiconductor substrate 11 as a mask, and then the resist 20 is removed from the semiconductor substrate 11. Then the semiconductor substrate 11 having the resist 20 removed is fixed on a stage, and the semiconductor substrate 11 is diced through stealth dicing using a laser. COPYRIGHT: (C)2010,JPO&INPIT