SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress a current leak from an upper electrode, and a method of manufacturing the same. SOLUTION: The semiconductor device has a semiconductor bottom structure portion 30, lower electrode wiring 41, a lower electrode 51, a dielectric...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TERAZONO SHINICHI, MITSUYAMA HIROSHI, MOMONO HIROYUKI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress a current leak from an upper electrode, and a method of manufacturing the same. SOLUTION: The semiconductor device has a semiconductor bottom structure portion 30, lower electrode wiring 41, a lower electrode 51, a dielectric film 61, and an upper electrode 71. The lower electrode wiring 41 is provided on the semiconductor bottom structure 30. The lower electrode 51 is provided on the lower electrode wiring 41. The dielectric film 61 is provided on the lower electrode 51. The upper electrode 71 is electrically insulated from the lower electrode 51, and provided on part of the dielectric film 61. The lower electrode 51 is electrically connected to the lower electrode wiring 41 on a surface SB of the lower electrode 51 which faces the lower electrode wiring 41. COPYRIGHT: (C)2010,JPO&INPIT