METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for filling a trench with a silicon oxide without forming any seams and without generating any high compressive stress near the trench. SOLUTION: The method of manufacturing the semiconductor device including a structure, where the trench 30 is filled with a silicon oxide 22 includes: a process for forming the trench 30 on the surface of the semiconductor substrate 50; a process for forming a silicon oxide layer 56 on the inner surface of the trench 30 so that a gap 58 is formed at the center of the trench 30; a process for filling the gap 58 with polysilicon 59; and a process for heat-treating a semiconductor substrate 50 under an oxidation atmosphere to change the whole of the filled polysilicon 59 to a silicon oxide. COPYRIGHT: (C)2010,JPO&INPIT