POWER CONVERSION DEVICE

PROBLEM TO BE SOLVED: To make the life of an inner semiconductor switching element and the life of an outer semiconductor switching element of a power conversion device of three-level configuration substantially equal to each other and thereby reduce the frequency of maintenance. SOLUTION: In the po...

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Bibliographische Detailangaben
Hauptverfasser: NAGATA HIROSHI, KATO SHUJI, SHIGYO MASAKANE
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To make the life of an inner semiconductor switching element and the life of an outer semiconductor switching element of a power conversion device of three-level configuration substantially equal to each other and thereby reduce the frequency of maintenance. SOLUTION: In the power conversion device of three-level configuration, the thermal resistance of a cooling fin for the outer semiconductor switching element is made larger than that of the inner semiconductor switching element to make the "interface temperature" of an inner IGBT and that of an outer IGBT substantially equal to each other. COPYRIGHT: (C)2010,JPO&INPIT