SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces backward leakage current while comparatively maintaining forward characteristics in forward behavior. SOLUTION: The semiconductor device 1 (horizontal SBD) includes: a nitride based semiconductor functional layer 2 having a second nitride based semiconductor region 22 functioning as a barrier layer on a first nitride based semiconductor region 21 on which a two-dimensional carrier gas layer 23 is formed; a first main electrode 3 electrically connected to one end of the two-dimensional carrier gas layer 23; a second main electrode 4 electrically connected to the other end of the two-dimensional carrier gas layer 23; and a metal oxide film 6 which is disposed between the first main electrode 3 and second main electrode 4 and electrically connected to the first main electrode 3 so as to reduce the carrier density of the two-dimensional carrier gas layer 23. COPYRIGHT: (C)2010,JPO&INPIT