RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME

PROBLEM TO BE SOLVED: To prevent pattern defects by improving the resolution of a resist material to be used for lithography when no barrier film is prepared on a resist film. SOLUTION: The resist film 102 is formed on a substrate 101, the film being formed from a resist material containing a perflu...

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Hauptverfasser:	ENDO MASATAKA, SASAKO MASARU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent pattern defects by improving the resolution of a resist material to be used for lithography when no barrier film is prepared on a resist film. SOLUTION: The resist film 102 is formed on a substrate 101, the film being formed from a resist material containing a perfluoroethyl acrylate that is a monomer containing a halogen atom (fluorine) and stable against an acid, a polyperfluoroethyl acrylate that is a polymer containing fluorine and stable against an acid, a polymer containing an acid-labile group, and a photo-acid generator. The resist film 102 is subjected to pattern exposure by selectively irradiating the resist film 102 with exposure light while a liquid 103 is disposed on the resist film 101. Subsequently, the resist film 102 subjected to the pattern exposure is developed to form a resist pattern 102b from the resist film 102. COPYRIGHT: (C)2010,JPO&INPIT