METHOD FOR MEASURING PATTERN USING SCANNING ELECTRON MICROSCOPE

PROBLEM TO BE SOLVED: To provide a method of removing blur of a pattern image acquired by an SEM and easily and accurately measuring the three-dimensional shape of a pattern of a sample surface based on information of the height direction of a pattern acquired by another measuring machine such as an...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YOSHIDA KOJI, MORIKAWA YASUTAKA
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of removing blur of a pattern image acquired by an SEM and easily and accurately measuring the three-dimensional shape of a pattern of a sample surface based on information of the height direction of a pattern acquired by another measuring machine such as an AFM. SOLUTION: A converged electron beam is radiated to a pattern of the sample surface to scan it, an SEM image is acquired, occurrence efficiencies of secondary electrons of the pattern is calculated by deconvolution operation based on the contrast shape of the SEM image created from the SEM image and the intensity distribution of the primary electron beam, occurrence efficiencies of the secondary electrons are compared and collated with each other using the occurrence efficiencies of the secondary electrons of the pattern predicted based on the information of the depth direction previously acquired by measuring the shape of the pattern with a scanning probe microscope, and the three-dimensional shape of the pattern is determined. COPYRIGHT: (C)2010,JPO&INPIT