GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a manufacturing method capable of simultaneously forming a p pad electrode 15 and an n electrode 16 in a face-up-type group III nitride semiconductor light-emitting element provided with a transparent electrode comprising ITO on a p-type layer. SOLUTION: The p pad electrode 15 comprising Ni/Au is formed on the transparent electrode 14 and the n electrode 16 comprising Ni/Au similarly is formed on an n-type layer 11 simultaneously. Then, thermal treatment is executed at 570°C. Thus, an excellent contact is attained in both of the p pad electrode and the n electrode. Also, a region 17 where a contact resistance with the p-type layer 13 is higher than that in the other region of the transparent electrode 14 is formed in the region positioned right below the p pad electrode 15 of the transparent electrode 14 by the thermal treatment, and since the area 12a positioned below the region 17 of an active layer 12 does not emit light, light emitting efficiency is improved. COPYRIGHT: (C)2010,JPO&INPIT