NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which is good in response characteristics, can improve the problem of current collapse, and also can form a gate recess portion exactly equal to device design values with good reproducibility. SOLUTION: The nitride semiconductor device has a channel layer 2 formed on a substrate 1 and made of a first nitride semiconductor, a first electron supply layer 3a formed above the channel layer 2 and made of a second nitride semiconductor having a larger band gap than the first nitride semiconductor, and a second electron supply layer 3b formed as two isolated regions above the first electron supply layer and made of a third nitride semiconductor having the same band gap with or a larger band gap than the first nitride semiconductor. An etching stopper layer 4 made of a material having a slower dry etching speed than the second electron supply layer 3b is formed between the first and second electron supply layers 3a and 3b, and a gate electrode 5 is formed filling the gate recess portion sandwiched between two regions above the layer 4. COPYRIGHT: (C)2010,JPO&INPIT