SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve productivity of a semiconductor device having SRAM circuits. SOLUTION: The SRAM circuit formed on a silicon substrate, has a MIS transistor having a gate electrode extending in a first direction D1, a first wiring layer, a second wiring layer M2 and a third wiring layer M3, a bit wiring BL formed on the second wiring layer M2, a first power supply wiring VL1 (supplying a power supply voltage VDD) and a second power supply wiring VL2 (supplying a reference voltage VSS), and a word wiring WL formed on the third wiring layer M3. Each wiring BL, VL1, VL2 of the second wiring layer M2, extend in a second direction D2 that intersects the first direction D1. The word wiring WL of the third wiring layer M3 is arranged so as to extend in the first direction D1. The semiconductor device having such SRAM circuit, further, extends in the first direction D1, and an external wiring EL formed on the third wiring layer M3. COPYRIGHT: (C)2010,JPO&INPIT