SUBSTRATE TREATMENT APPARATUS

PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus which improves an evenness of in-plane temperature distribution of wafers and has a good energy efficiency. SOLUTION: In a batch heat-treatment apparatus, a shield 52 is concentrically arranged outside a process tube 36 to confine elec...

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1. Verfasser: OKUNO MASAHISA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus which improves an evenness of in-plane temperature distribution of wafers and has a good energy efficiency. SOLUTION: In a batch heat-treatment apparatus, a shield 52 is concentrically arranged outside a process tube 36 to confine electromagnetic waves. A port 53 for introducing electromagnetic waves is formed in the shield 52 at the middle height thereof, and one end of a waveguide 54 is connected to the port 53 for introducing electromagnetic waves and a source 55 of microwaves for supplying microwaves is connected to the other end of the waveguide 54. Holders 47 made of silicon are installed in holding grooves 46, 46, 46 formed at the same stages of a boat 42 for carrying in a plurality of wafers 1 into a treatment chamber 37, and wafers 1 are stored and held in holding holes 48 of individual holders 47. By absorbing the concentration of microwaves on the peripheral edge of the wafers by means of the holders, extreme heating of the peripheral edge of the wafers can be prevented. COPYRIGHT: (C)2010,JPO&INPIT