METHOD OF MANUFACTURING SOI SUBSTRATE

PROBLEM TO BE SOLVED: To manufacture an SOI substrate which forms a mark for performing discrimination from other substrates and prepares a single crystal semiconductor layer on a glass substrate with a buffer layer therebetween with a high yield. SOLUTION: The single crystal semiconductor layer is...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HANAOKA KAZUYA, SHINGU TAKASHI, ENDO TAICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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