METHOD OF MANUFACTURING SOI SUBSTRATE

PROBLEM TO BE SOLVED: To manufacture an SOI substrate which forms a mark for performing discrimination from other substrates and prepares a single crystal semiconductor layer on a glass substrate with a buffer layer therebetween with a high yield. SOLUTION: The single crystal semiconductor layer is formed on a glass substrate with a buffer layer therebetween. The glass substrate is exposed by removing the peripheral region of a laminate in which the buffer layer and the single crystal semiconductor layer are laminated. A mark is formed on the glass substrate exposed to the outside of the laminate in which the buffer layer and the single crystal semiconductor layer are laminated. COPYRIGHT: (C)2010,JPO&INPIT