SEMICONDUCTOR IMAGE SENSOR

PROBLEM TO BE SOLVED: To provide a semiconductor image sensor improved in conversion efficiency. SOLUTION: This image sensor 10 has an image sensing element that includes an N-type conducting region 26 and a P-type pinned layer 37. The two regions form two P-N junctions at different depths that impr...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SHURINASU RAMASUWAMI, MARK S SWENSON, CLIFFORD I DROWLEY, JENNIFER J PATERSON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor image sensor improved in conversion efficiency. SOLUTION: This image sensor 10 has an image sensing element that includes an N-type conducting region 26 and a P-type pinned layer 37. The two regions form two P-N junctions at different depths that improves the efficiency of charge carrier collection at different frequencies of light. The conducting region 26 is formed by angled injection that allows a portion of the conducting region 26 to function as a source of an MOS transistor 32. COPYRIGHT: (C)2010,JPO&INPIT