METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, improved in mass productivity, yield, and reliability. SOLUTION: The method for manufacturing a nitride semiconductor device includes a step in which a first contact hole 12 which partially exposes a source region 3 surface and a p+ contact region 5 surface is formed by etching a gate oxide film 6 and an interlayer oxide film 9, and at the same time, a second contact hole 13 which partially exposes a gate electrode 7 surface on the upper side of a drift region 2 is formed by etching the interlayer oxide film 9. It also includes a step in which a first oxide film is formed by thermally oxidizing the exposed upper part of a source region 3 and the upper part of p+ contact region 5, and at the same time, an oxide film 16 which is thicker than the first oxide film is formed by thermally oxidizing the exposed upper part of gate electrode 7. It further includes steps of: totally removing the first oxide film while leaving the oxide film 16 alone; forming an Ni film 17; and forming an NiSi film 18 by the first annealing. COPYRIGHT: (C)2010,JPO&INPIT