SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for a high-density design by forming the opening of a solder resist in the same size as that of an electrode terminal, while maintaining a necessary land diameter for forming a solder ball; and a method of manufacturing the semiconductor device. SOLUTION: The method includes: an aperture process to form an opening with a larger diameter than that of an electrode terminal 12b on a first resist 16 by selectively removing the first solder resist 16 formed on the electrode terminal 12b; a conductive film formation process to form a conductive film 17 on the electrode terminal 12b through the opening; a second resist application process to apply the second resist to a region including the opening and to fill up space between the periphery of the electrode terminal 12b, wherein a conductive film 17 is formed inside the opening, and the first solder resist 16; and an exposure process to expose the whole front surface of the conductive film 17 on the upper surface of the electrode terminal 12b. COPYRIGHT: (C)2010,JPO&INPIT