TERAHERTZ LIGHT DETECTION APPARATUS AND ITS DETECTION METHOD

PROBLEM TO BE SOLVED: To provide a terahertz light detection apparatus and its detection method which can clearly detect the intensity of extremely week terahertz light and measure its frequency by a small-scale apparatus without requiring an ultralow temperature. SOLUTION: The terahertz light detection apparatus includes a semiconductor chip 12 in which two-dimensional electron gas 13 is formed at a constant position from its surface, a carbon nanotube 14 provided in close contact with the surface of the semiconductor chip, an electrically conductive source electrode 15, a drain electrode 16, and a gate electrode 17. The carbon nanotube 14 extends along the surface of the semiconductor chip, and its both ends are connected to the source electrode and the drain electrode. The gate electrode 17 is positioned spaced apart from the side of the carbon nanotube by a predetermined distance. The apparatus further includes an SD current detection circuit 18 which applies a predetermined voltage to between the source electrode and the drain electrode to detect an SD current therebetween, a gate voltage application circuit 19 which applies a variable voltage to between the source electrode and the gate electrode to detect a gate voltage therebetween, and a magnetic field generator 20 for applying a variable magnetic field to the semiconductor chip. COPYRIGHT: (C)2010,JPO&INPIT