METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND DEPOSITION SYSTEM

PROBLEM TO BE SOLVED: To provide large adhesion between a thin film being an SiCO film or an SiCN film for a hard mask and a fluorine-added carbon film when the thin film is deposited on the fluorine-added carbon film (CF film). SOLUTION: When the SiCO film is used as the hard mask, a method includes: exposing the CF film for about 5-10 seconds in a plasma atmosphere activated with an organic compound of silicon, for example, trimethyl silane gas; next, adding nitrogen plasma to this plasma and depositing the SiCN film on the fluorine-added carbon film; and thereafter, depositing the SiCO film by the plasma activating trimethyl silane gas and oxygen gas. When the SiCO film is deposited, a reaction of active species of oxygen with carbon in the CF film is suppressed and thus, the degassed amount of the CF film is reduced. Further, also when the SiCN film is used as the hard mask, similarly plasma treatment of trimethyl silane gas is first carried out. COPYRIGHT: (C)2010,JPO&INPIT