SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve operation uniformity in an MIS transistor without enlarging an area of the MIS transistor in a semiconductor device including the MIS transistor as an ESD protective element. SOLUTION: In the semiconductor device including the MIS transistor formed on a semiconductor substrate 10, the MIS transistor includes a drain diffusion layer 15 formed on the semiconductor substrate 10, a plurality of dividers 14 placed at intervals from one another along a channel breadthwise direction on the substrate 10 for dividing the drain diffusion layer 15 from one another along the channel breadthwise direction, and a stress film 17 formed to cover the dividers 14 on the semiconductor substrate 10 for generating stress in the channel breadthwise direction of the drain diffusion layer 15. COPYRIGHT: (C)2010,JPO&INPIT