SEMICONDUCTOR DEVICE FOR ELECTRIC POWER

PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power having a superjunction electrostatic induction type transistor capable of improving a characteristic of inverse mode operation of the transistor. SOLUTION: This semiconductor device includes: a normally ON type SJ-SIT10 having an (n) type drift layer 12; a plurality of columnar (p) type gate drift layers 14 periodically arranged in the direction along a film surface in the (n) type drift layer 12 and extended in the vertical direction to the film surface; a drain electrode 23 arranged on a surface on one side of the (n) type drift layer 12 and electrically connected to the (n) type drift layer 12; a low resistance (n+) type source layer 16 arranged on a surface on the other side of the (n) type drift layer 12; a source electrode 21 arranged so as to contact with the surface of the (n+) type source layer 16 and a gate electrode 25 connected to the (p) type gate drift layer 14; and a resistance 33 connected between the source electrode 21 and the gate electrode 25 and maintaining voltage of the gate electrode 25 so as not to exceed voltage of the source electrode 21. COPYRIGHT: (C)2010,JPO&INPIT