FILM FORMING APPARATUS AND FILM FORMING METHOD

PROBLEM TO BE SOLVED: To provide a film forming apparatus capable of obtaining high hydrogen passivation effect while improving a film forming speed of formation of an antireflective film of a solar cell. SOLUTION: The film forming apparatus includes a chamber 101, an anode electrode 106 disposed in the chamber 101 and holding a workpiece 100 provided with a base layer containing silicon (Si), a cylindrical hollow cathode electrode 102 disposed opposite to the anode electrode 106 in the chamber, a gas supply pipe 109 for supplying a material gas containing hydrogen (H2), nitrogen (N) and silicon (Si) to the hollow cathode electrode 102, and a power supply 105 for applying a low frequency between the hollow cathode electrode 102 and anode electrode 106 to generate plasma P by hollow cathode discharge. A silicon nitride film is formed by supplying the material gas induced by the plasma P to the base layer. COPYRIGHT: (C)2010,JPO&INPIT