SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof which form a wide gap semiconductor layer generating a two-dimensional electron gas using a compound semiconductor as constitutional elements of a semiconductor layer under the wide gap semiconductor layer to achieve a semiconductor device having a diode or an HEMT (High Electron Mobility Transistor) structure MIS (Metal Insulator Semiconductor) type transistor, extremely low in rise voltage and high in withstand reverse voltage. SOLUTION: An N-type GaN layer 2 superior to a GaAs substrate 1 in band gap and carrier concentration is formed on the GaAs substrate 1 to have a thickness allowing generation of the two-dimensional electron gas on a surface of the GaAs substrate 1 and tunneling of electrons of the two-dimensional gas. A first electrode 3 is formed to be electrically connected with the GaN layer 2 and a second electrode 4 is formed to be electrically connected with the GaAs substrate 1. COPYRIGHT: (C)2010,JPO&INPIT