MAGNETIC THIN FILM, ITS FORMING METHOD AND APPLICATION DEVICE OF MAGNETIC THIN FILM

PROBLEM TO BE SOLVED: To provide a magnetic thin film capable of providing high Ku while suppressing saturation magnetization Ms low, its forming method, and various kinds devices to which the magnetic thin film is applied. SOLUTION: The magnetic thin film includes a Co-M-Pt alloy (M indicates a sin...

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Hauptverfasser:	KATAOKA HIROYASU, SHIMAZU TAKEHITO, OKAMOTO SATOSHI, AOI MOTOI, SATO HIDEO, KITAGAMI OSAMU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TRANSFORMERS
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a magnetic thin film capable of providing high Ku while suppressing saturation magnetization Ms low, its forming method, and various kinds devices to which the magnetic thin film is applied. SOLUTION: The magnetic thin film includes a Co-M-Pt alloy (M indicates a single or a plurality of metallic elements other than Co and Pt) having an ordered structure of atoms of L11type. For instance, the Co-M-Pt alloy is a Co-Ni-Pt alloy, and is composed of 10-35(at.%) of Co, 20-55(at.%) of Ni and the rest of Pt. Also, the magnetic thin film is applied to a magnetic film to be used in a vertical magnetic recording medium, a tunnel magnetic resistance element (TMR), a magnetic resistance random access memory (MRAM) or a MEMS device or the like. COPYRIGHT: (C)2010,JPO&INPIT