METHOD OF CORRECTING REFLECTIVE MASK

PROBLEM TO BE SOLVED: To provide a method of correcting defects in a multilayer film due to irregularities on a reflective mask for EUV (Extreme Ultra Violet) lithography. SOLUTION: The reflective mask is formed by using a mask blank comprising the substrate 1 and the multilayer film 2 arranged on i...

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Bibliographische Detailangaben
1. Verfasser:	IRIKITA NOBUYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of correcting defects in a multilayer film due to irregularities on a reflective mask for EUV (Extreme Ultra Violet) lithography. SOLUTION: The reflective mask is formed by using a mask blank comprising the substrate 1 and the multilayer film 2 arranged on it. When the reflective mask has defects, a defect part of a defect region comprising the defects of the reflective mask due to the irregularities on the substrate 1 is removed, and it is replaced with a normal part 10 of a flat region, from which the defect region is removed and which does not comprise the defects. COPYRIGHT: (C)2010,JPO&INPIT