PRECURSOR SOLUTION FOR FILM FORMATION

PROBLEM TO BE SOLVED: To provide a precursor solution for film formation that enables the formation of a film containing niobium or tantalum by a coating method and has excellent storage stability. SOLUTION: The precursor solution for film formation comprises a reaction product produced by reacting...

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Hauptverfasser:	NAKADA KUNIHIKO, SUGAWARA KENICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CABLES CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOUNDS THEREOF CONDUCTORS CORRECTING FLUIDS DYES ELECTRICITY FILLING PASTES INKS INORGANIC CHEMISTRY INSULATORS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PHYSICS POLISHES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a precursor solution for film formation that enables the formation of a film containing niobium or tantalum by a coating method and has excellent storage stability. SOLUTION: The precursor solution for film formation comprises a reaction product produced by reacting a niobium compound or a tantalum compound with 2.5-3.5 moles of hydrogen oxide per one mole of niobium compound or tantalum compound and has a solid concentration of not more than 8.5 wt.%. COPYRIGHT: (C)2010,JPO&INPIT