CHEMICAL MECHANICAL POLISHING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To precisely predict a polishing rate of a wafer for the next session with no test polishing when switching a kind of film of the wafer to be dealt with. SOLUTION: The measurement value of all or a part of device state parameters comprising a torque of a dresser for toothing of a polishing pad, a temperature of the dresser, a pressure of the dresser, and accumulated use hours since the dresser was replaced, is cut out of continuous sampling time-series data of each wafer polishing, for the entire polishing period or only predetermined polishing period. Using the continuous sampling time-series data that has been cut out, a polishing device reference polishing rate is predicted for each wafer. A reduced polishing rate which is a polishing rate conversion value for a wafer to be dealt with next time is calculated using a conversion parameter for each kind of wafer film that has been preset as well as the predicted polishing device reference polishing rate. The reduced polishing rate is used to calculate polishing period for the optimum amount of polishing, for polishing the wafer which is to be dealt with next time. COPYRIGHT: (C)2010,JPO&INPIT