STORAGE DEVICE

PROBLEM TO BE SOLVED: To provide a storage device which attains high integration of a resistance change element in a storage device using the resistance change element such as a spin injection memory. SOLUTION: The storage device includes: a plurality of resistance change elements in which a resistance value is changed by a direction of a supplied current; a plurality of resistors for access performing on-off control of current supply for each resistance change element; bit lines connected to one end of a plurality of resistance change element; source lines connected respectively to the other end of the plurality of resistance change element through the transistors for access; a plurality of word lines connected respectively to a gate of transistors for access; a ground line to which a ground potential is applied; and a transistor for switch connecting the bit line or source line to the ground line at the on-state. When current is supplied to the resistance change element, the transistor for switch is turned on, the bit line or the source line is set to a ground potential. COPYRIGHT: (C)2010,JPO&INPIT