DIAMOND-LIKE CARBON AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a DLC thin film material which is p-type conduction in electric conduction, and has low resistivity and high hardness, to provide a manufacturing method of the DLC film, and to provide an industrial product using the DLC film. SOLUTION: In the diamond-like carbon in...

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Bibliographische Detailangaben
Hauptverfasser: SUZUKI YASUO, TODA TADAO, WATANABE MASANORI, NAKAJIMA KENJIRO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a DLC thin film material which is p-type conduction in electric conduction, and has low resistivity and high hardness, to provide a manufacturing method of the DLC film, and to provide an industrial product using the DLC film. SOLUTION: In the diamond-like carbon in which p-type dopant such as boron and magnesium of III group elements or II group elements of the Periodic Table, its electric conduction of p-type conduction. High concentration plasma of hydrocarbon gas of low molecular quantity is generated, and a base material to be worked is installed so as to be brought into contact with discharge plasma. The temperature of the base material is kept at ≥200°C, the positive and negative or negative pulse voltage of ≥1 kV is applied to the base material to manufacture a p-type conduction DLC film on the surface of the base material. COPYRIGHT: (C)2010,JPO&INPIT