LARGE-AREA SUBSTRATE PROCESSOR USING HOLLOW CATHODE PLASMA

PROBLEM TO BE SOLVED: To provide a large-area substrate processor using hollow cathode plasma capable of executing a process such as ashing, washing, and etching by using plasma to a substrate such as a semiconductor wafer or a glass substrate. SOLUTION: The large-area substrate processor using holl...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	CHO JEONGHEE, JOO JONG RYANG, YANG JAE-KYUN, PARK SHINKEUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a large-area substrate processor using hollow cathode plasma capable of executing a process such as ashing, washing, and etching by using plasma to a substrate such as a semiconductor wafer or a glass substrate. SOLUTION: The large-area substrate processor using hollow cathode plasma includes a process chamber preparing a space in which substrate processing is executed and forming an exhaust port for exhausting a gas, a gas supply section for supplying the gas to the process chamber, a substrate support section for supporting the substrate by locating inside the process chamber, a hollow cathode forming a plurality of lower recessed sections located inside the process chamber and generating plasma on a bottom surface, a baffle located at a lower part of the hollow cathode and forming a plurality of injection ports, and a power supply source for supplying power to the hollow cathode. COPYRIGHT: (C)2010,JPO&INPIT