PLASMA CVD APPARATUS, DLC FILM, AND METHOD FOR PRODUCING THIN FILM

PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can increase a voltage VDCthat is a DC component generated in an electrode while a high-frequency power discharges electricity when forming a film with a CVD technique. SOLUTION: The plasma CVD apparatus includes: a chamber 1; a holding e...

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Hauptverfasser: KAWABE TAKEHARU, HONDA YUJI, ABE KOJI, HAYAKAWA HARUHITO
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creator KAWABE TAKEHARU
HONDA YUJI
ABE KOJI
HAYAKAWA HARUHITO
description PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can increase a voltage VDCthat is a DC component generated in an electrode while a high-frequency power discharges electricity when forming a film with a CVD technique. SOLUTION: The plasma CVD apparatus includes: a chamber 1; a holding electrode 2 which is arranged in the chamber and holds a substrate to be film-formed; a high-frequency power source 8 which is electrically connected to the holding electrode 2; a counter electrode 12 which is arranged so as to oppose to the substrate to be film-formed held by the holding electrode 2 and is connected to a ground power source or a floating power source; a source-gas-feeding mechanism which feeds a source gas to a space 13 between the counter electrode 12 and the holding electrode 2; and an exhausting mechanism which evacuates the inside of the chamber. The surface areas of the holding electrode 2 and the counter electrode 12 satisfy the expression of b/a≥2 when the surface areas are defined as a and b, respectively. COPYRIGHT: (C)2010,JPO&INPIT
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2010013676A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2010013676A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2010013676A3</originalsourceid><addsrcrecordid>eNrjZHAK8HEM9nVUcA5zUXAMCHAMcgwJDdZRcPFxVnDz9PHVUXD0c1HwdQ3x8HdRcPMPUggI8ncJdfb0c1cI8fD0A6vhYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoYGBobGZuZmjsZEKQIAAZQq8Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA CVD APPARATUS, DLC FILM, AND METHOD FOR PRODUCING THIN FILM</title><source>esp@cenet</source><creator>KAWABE TAKEHARU ; HONDA YUJI ; ABE KOJI ; HAYAKAWA HARUHITO</creator><creatorcontrib>KAWABE TAKEHARU ; HONDA YUJI ; ABE KOJI ; HAYAKAWA HARUHITO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can increase a voltage VDCthat is a DC component generated in an electrode while a high-frequency power discharges electricity when forming a film with a CVD technique. SOLUTION: The plasma CVD apparatus includes: a chamber 1; a holding electrode 2 which is arranged in the chamber and holds a substrate to be film-formed; a high-frequency power source 8 which is electrically connected to the holding electrode 2; a counter electrode 12 which is arranged so as to oppose to the substrate to be film-formed held by the holding electrode 2 and is connected to a ground power source or a floating power source; a source-gas-feeding mechanism which feeds a source gas to a space 13 between the counter electrode 12 and the holding electrode 2; and an exhausting mechanism which evacuates the inside of the chamber. The surface areas of the holding electrode 2 and the counter electrode 12 satisfy the expression of b/a≥2 when the surface areas are defined as a and b, respectively. COPYRIGHT: (C)2010,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100121&amp;DB=EPODOC&amp;CC=JP&amp;NR=2010013676A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100121&amp;DB=EPODOC&amp;CC=JP&amp;NR=2010013676A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWABE TAKEHARU</creatorcontrib><creatorcontrib>HONDA YUJI</creatorcontrib><creatorcontrib>ABE KOJI</creatorcontrib><creatorcontrib>HAYAKAWA HARUHITO</creatorcontrib><title>PLASMA CVD APPARATUS, DLC FILM, AND METHOD FOR PRODUCING THIN FILM</title><description>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can increase a voltage VDCthat is a DC component generated in an electrode while a high-frequency power discharges electricity when forming a film with a CVD technique. SOLUTION: The plasma CVD apparatus includes: a chamber 1; a holding electrode 2 which is arranged in the chamber and holds a substrate to be film-formed; a high-frequency power source 8 which is electrically connected to the holding electrode 2; a counter electrode 12 which is arranged so as to oppose to the substrate to be film-formed held by the holding electrode 2 and is connected to a ground power source or a floating power source; a source-gas-feeding mechanism which feeds a source gas to a space 13 between the counter electrode 12 and the holding electrode 2; and an exhausting mechanism which evacuates the inside of the chamber. The surface areas of the holding electrode 2 and the counter electrode 12 satisfy the expression of b/a≥2 when the surface areas are defined as a and b, respectively. COPYRIGHT: (C)2010,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAK8HEM9nVUcA5zUXAMCHAMcgwJDdZRcPFxVnDz9PHVUXD0c1HwdQ3x8HdRcPMPUggI8ncJdfb0c1cI8fD0A6vhYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoYGBobGZuZmjsZEKQIAAZQq8Q</recordid><startdate>20100121</startdate><enddate>20100121</enddate><creator>KAWABE TAKEHARU</creator><creator>HONDA YUJI</creator><creator>ABE KOJI</creator><creator>HAYAKAWA HARUHITO</creator><scope>EVB</scope></search><sort><creationdate>20100121</creationdate><title>PLASMA CVD APPARATUS, DLC FILM, AND METHOD FOR PRODUCING THIN FILM</title><author>KAWABE TAKEHARU ; HONDA YUJI ; ABE KOJI ; HAYAKAWA HARUHITO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2010013676A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KAWABE TAKEHARU</creatorcontrib><creatorcontrib>HONDA YUJI</creatorcontrib><creatorcontrib>ABE KOJI</creatorcontrib><creatorcontrib>HAYAKAWA HARUHITO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAWABE TAKEHARU</au><au>HONDA YUJI</au><au>ABE KOJI</au><au>HAYAKAWA HARUHITO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA CVD APPARATUS, DLC FILM, AND METHOD FOR PRODUCING THIN FILM</title><date>2010-01-21</date><risdate>2010</risdate><abstract>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can increase a voltage VDCthat is a DC component generated in an electrode while a high-frequency power discharges electricity when forming a film with a CVD technique. SOLUTION: The plasma CVD apparatus includes: a chamber 1; a holding electrode 2 which is arranged in the chamber and holds a substrate to be film-formed; a high-frequency power source 8 which is electrically connected to the holding electrode 2; a counter electrode 12 which is arranged so as to oppose to the substrate to be film-formed held by the holding electrode 2 and is connected to a ground power source or a floating power source; a source-gas-feeding mechanism which feeds a source gas to a space 13 between the counter electrode 12 and the holding electrode 2; and an exhausting mechanism which evacuates the inside of the chamber. The surface areas of the holding electrode 2 and the counter electrode 12 satisfy the expression of b/a≥2 when the surface areas are defined as a and b, respectively. COPYRIGHT: (C)2010,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title PLASMA CVD APPARATUS, DLC FILM, AND METHOD FOR PRODUCING THIN FILM
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T08%3A25%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KAWABE%20TAKEHARU&rft.date=2010-01-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2010013676A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true