SUBSTRATE FOR HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

SUBSTRATE FOR HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

PROBLEM TO BE SOLVED: To provide a substrate for a high electron mobility transistor (HEMT), which is substantially produced from a layer of a nitride of a group 13 element. SOLUTION: The substrate for the high electron mobility transistor (HEMT) is formed from a single crystal GaN obtained by the c...

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Hauptverfasser: GARCZYNSKI JERZY, SIERZPUTOWSKI LESZEK P, KANBARA YASUO, DWILINSKI ROBERT, DORADZINSKI ROMAN
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a substrate for a high electron mobility transistor (HEMT), which is substantially produced from a layer of a nitride of a group 13 element. SOLUTION: The substrate for the high electron mobility transistor (HEMT) is formed from a single crystal GaN obtained by the crystal growth in a direction perpendicular to the growth direction of a seed with respect to a seed in a supercritical ammonia method and has surface defect density of about 102/cm2. The substrate imparts performance parameters such as a W-CDMA band (about 2 GHz) not lower than 50 W and a gain not lower than 25 dB at 60 V to a transistor formed on the substrate. COPYRIGHT: (C)2010,JPO&INPIT