COPPER-PLATED VIA OF HIGH ASPECT RATIO, AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide an improved process for manufacturing a via applicable to a requirement in the latest scaling technique, and capable of manufacturing the appropriately operable via in a batch. SOLUTION: The via and its manufacturing technique are provided with the improved high aspe...

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Hauptverfasser:	MCFEELY FENTON R, YANG CHIHAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an improved process for manufacturing a via applicable to a requirement in the latest scaling technique, and capable of manufacturing the appropriately operable via in a batch. SOLUTION: The via and its manufacturing technique are provided with the improved high aspect ratio. In one embodiment, the manufacturing method is provided for the copper-plated via of the improved high aspect ratio. The method includes a step of etching the via of the high aspect ratio into a dielectric layer, for depositing a diffusion barrier region in the via of the high aspect ratio and on one or a plurality of surfaces of the dielectric layer, for depositing a copper layer on the diffusion barrier layer, for depositing a ruthenium layer on the copper layer, and for filling the via of the high aspect ratio with the plated copper on the ruthenium layer. Also, the via of the high aspect ratio is provided as copper-plated according to the method. COPYRIGHT: (C)2010,JPO&INPIT