PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve the production yield and reliability of a semiconductor device. SOLUTION: Cleavages are generated at a mid-depth in the depth direction of the semiconductor substrate from the bottom of the concave portion while forming recesses on the main surface of the semiconductor substrate by contacting the leading edge of a blade serving as a cutting jig with the upper side of the plate-like semiconductor substrate. Subsequently, a film is disposed on the back side of the semiconductor substrate. Then, the generation of the cleavages is promoted to separate the semiconductor substrate by extending the film after generating cleavages. Use of such a method allows improvement in the production yield and reliability of the semiconductor device. COPYRIGHT: (C)2010,JPO&INPIT