SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To solve problems in existing semiconductor devices wherein bonding resins peel at interfaces with an insulating layer, and the bonding resins crack as a result of the peeling. SOLUTION: In a semiconductor device, an open area 32 is formed in a wiring layer 31, which is the third, wider than the formation area of a photodiode 7. Level differences corresponding to an insulating layer 30 and the wiring layer 31 are formed in a fourth insulating layer 33 covering the third wiring layer 31 and a passivation film 35. The structure forms a thick film area of a silicone resin 37 as wide as the formation area of the open area 32 to relax local concentration of thermal stress on the silicone resin 37. COPYRIGHT: (C)2010,JPO&INPIT