SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To solve the disadvantages of existing semiconductor devices wherein bonding resins peel at interfaces with an insulating layer, and cracks resulting from the peeling form appearance defects. SOLUTION: In a semiconductor device, a fourth insulating layer 33 forms a protrusion 34 to reduce a level difference t1 on the formation area of a photodiode 7. The level difference of a passivation film 36 is thus reduced over the surface of a substrate 1 to reduce variations in film thickness of a silicone resin 38. The structure relaxes local concentration of thermal stress on the silicone resin 38 to prevent peeling-based cracks in the silicone resin 38 and whereby crack-based appearance defects. COPYRIGHT: (C)2010,JPO&INPIT