PLASMA PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a plasma processing device in which uniform plasma is generated by forming streamer discharge stably, and further, upsizing and cost increase of the device is suppressed. SOLUTION: A plasma generating gas G is supplied to an opposed region 2 formed between opposed el...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HIRAI TAKAHIKO, SHIBATA TETSUJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma processing device in which uniform plasma is generated by forming streamer discharge stably, and further, upsizing and cost increase of the device is suppressed. SOLUTION: A plasma generating gas G is supplied to an opposed region 2 formed between opposed electrodes 1, 1. By applying a voltage between the electrodes 1, 1 under atmospheric pressure or under the pressure near it, streamer discharge S is formed in the opposed region 2 and, by this streamer discharge S, plasma P is generated in the opposed region 2. The plasma processing device to supply this plasma P to a treating object H is provided. The device is provided with: a streamer discharge forming means to form the streamer discharge S by generating a non-uniform electric field intensity distribution in the opposed region 2; and a streamer discharge dispersion means to disperse the streamer discharge S in the opposed region 2. COPYRIGHT: (C)2010,JPO&INPIT