TRANSISTOR WITH ULTRA-SHORT GATE SHAPE AND MEMORY CELL, AND METHOD OF MANUFACTURING THEM

PROBLEM TO BE SOLVED: To provide a semiconductor element allowing channel length to be dramatically scaled by manufacturing a high-performance transistor and a memory cell exhibiting strong program/erasure efficiency and reading speed, and having a very small gate shape and a total size allowing a l...

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Bibliographische Detailangaben

Hauptverfasser:	WANG HSINGYA ARTHUR, RABKIN PETER, CHOU KAING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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