METHOD FOR MANUFACTURING SOLDER BUMP

METHOD FOR MANUFACTURING SOLDER BUMP

PROBLEM TO BE SOLVED: To provide a method for manufacturing solder bumps, which can improve the accuracy in the weight ratio of Sn to Cu. SOLUTION: A resist layer 40 having an aperture 41 is formed on a UBM layer 30 formed on a semiconductor element 20, and a Cu plating layer 11 of which the thickne...

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Hauptverfasser: KATO KYOKO, TOGASAKI TAKASHI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KATO KYOKO
TOGASAKI TAKASHI
description PROBLEM TO BE SOLVED: To provide a method for manufacturing solder bumps, which can improve the accuracy in the weight ratio of Sn to Cu. SOLUTION: A resist layer 40 having an aperture 41 is formed on a UBM layer 30 formed on a semiconductor element 20, and a Cu plating layer 11 of which the thickness is substantially 0 is formed on the inner surface of the aperture 41 by an electric plating method; and after further forming an Sn plating layer 12 in the aperture 41, the resist layer 40 is removed, the UBM layer 30 is etched, and the Cu plating layer 11 and the Sn plating layer 12 are reflowed to form a solder bump of Sn-0.7Cu. COPYRIGHT: (C)2010,JPO&INPIT
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SOLUTION: A resist layer 40 having an aperture 41 is formed on a UBM layer 30 formed on a semiconductor element 20, and a Cu plating layer 11 of which the thickness is substantially 0 is formed on the inner surface of the aperture 41 by an electric plating method; and after further forming an Sn plating layer 12 in the aperture 41, the resist layer 40 is removed, the UBM layer 30 is etched, and the Cu plating layer 11 and the Sn plating layer 12 are reflowed to form a solder bump of Sn-0.7Cu. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR MANUFACTURING SOLDER BUMP
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