INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME (INTERCONNECT STRUCTURE FOR ELECTROMIGRATION RESISTANCE ENHANCEMENT)

PROBLEM TO BE SOLVED: To provide an interconnect structure having electromigration resistance enhanced by lining the inside of a lower portion of a via opening inside with a multi-layered liner. SOLUTION: The multi-layered liner includes, from the patterned surface of a dielectric material outwards, a diffusion barrier, a multi-material layer and a metal-containing hard mask. The multi-material layer includes a first material layer comprised of residue from an underlying dielectric capping layer, and a second material layer comprised of residue from an underlying metallic capping layer. The present invention also provides a method of fabricating such an interconnect structure which includes the multi-layered liner within the lower portion of the via opening formed within a dielectric material. COPYRIGHT: (C)2010,JPO&INPIT