SEMICONDUCTOR SUBSTRATE FOR LIGHT EMITTING ELEMENT, AND LIGHT EMITTING ELEMENT

PROBLEM TO BE SOLVED: To attain compatibility between high internal quantum efficiency obtained by reduction in through dislocation density and high external quantum efficiency obtained by effective use of light emission of an active layer while using an inexpensive silicon substrate. SOLUTION: A se...

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1. Verfasser:	KIDO SHIGERU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Zusammenfassung:	PROBLEM TO BE SOLVED: To attain compatibility between high internal quantum efficiency obtained by reduction in through dislocation density and high external quantum efficiency obtained by effective use of light emission of an active layer while using an inexpensive silicon substrate. SOLUTION: A semiconductor substrate for a light emitting element which has unevenness provided on a surface and also has SiC laminated is characterized in that a semiconductor is single-crystal silicon, a projection portion is a hollow 7, and an SiC layer 11 is formed on a surface of the projection portion. Further, there is a layer of oxide on an interface between the hollow 7 and semiconductor substrate. COPYRIGHT: (C)2010,JPO&INPIT