MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of decreasing the number of steps in forming a pattern having a dimension exceeding an exposure resolution limit of lithography. SOLUTION: A first mask material film is formed on a processed film formed on a semiconductor substrate. A resist pattern is formed on the first mask material film. A second mask material film of a predetermined film thickness is so formed on the first mask material film as to cover the resist pattern. The second mask material film is etched back to expose the resist pattern and the first mask material film. The exposed resist pattern and the first mask material film are processed at the same time while the second mask material film having been etched back is left out for processing the processed film part exposed under the first mask material film. COPYRIGHT: (C)2010,JPO&INPIT