SINGLE CRYSTAL SiC SEMICONDUCTOR SUBSTRATE, ITS PRODUCING METHOD AND LIGHT EMITTING ELEMENT AND SEMICONDUCTOR ELEMENT USING IT

PROBLEM TO BE SOLVED: To provide a single crystal SiC semiconductor substrate where the surface nature of the substrate is enhanced, where the crystallinity of an SiC epitaxial layer can be enhanced and which can be produced at a low cost and to provide its producing method. SOLUTION: Porous layers 2, 3 are formed on a silicon substrate 1 and a single crystal silicon layer 4 is formed on the porous layers 2, 3. Next, a hollow structure layer 5 is formed in the porous layers 2, 3 by heat treatment and the hollow structure layer 5 is oxidized by oxidation treatment. Further, an SiC seed layer 9 is formed by modifying the single crystal silicon layer 4 to a single crystal silicon carbide layer by carbonization treatment and then a single crystal SiC layer 10 is formed by the epitaxial growth of the SiC seed layer 9 as a core. COPYRIGHT: (C)2010,JPO&INPIT