MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a magnetoresistive element having a configuration and a structure where a disturb phenomenon caused by a neighboring spin injection type magnetoresistive element hardly occurs. SOLUTION: A magnetoresistive element 30 has a layered structure 50 provided with a recordi...

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Bibliographische Detailangaben
1. Verfasser: SHOJI MITSUHARU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a magnetoresistive element having a configuration and a structure where a disturb phenomenon caused by a neighboring spin injection type magnetoresistive element hardly occurs. SOLUTION: A magnetoresistive element 30 has a layered structure 50 provided with a recording layer 53 into which information is written on the basis of spin injection magnetization inversion caused by a current. An outer edge of the recording layer 53 is surrounded with a magnetic shield layer 180 via an insulating area 170. The magnetic shield layer 180 is constituted of an extension part 53A of the recording layer 53. COPYRIGHT: (C)2010,JPO&INPIT