SILICON WAFER PROCESSING METHOD AND APPARATUS

PROBLEM TO BE SOLVED: To make the quality of wafers as consistent as possible by performing an oxide film removal processing on the surface of a silicon wafer, specifically, performing efficient removal of an oxide film from the inner wall of opened defects which is difficult by wet cleaning with hy...

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Hauptverfasser:	KOSASA KAZUAKI, KAWASAKI TOMONORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To make the quality of wafers as consistent as possible by performing an oxide film removal processing on the surface of a silicon wafer, specifically, performing efficient removal of an oxide film from the inner wall of opened defects which is difficult by wet cleaning with hydrofluoric acid water, etc. and by controlling the oxide film removal rate during the oxide film removal processing process. SOLUTION: A processing method is provided, wherein a mixed gas containing hydrogen fluoride and water vapor is produced and the produced mixed gas is sprayed against a silicon wafer to perform a processing such as removal of an oxide film. In this method, the ratio of hydrogen fluoride to water vapor can be changed in conformity with the oxide film to be removed. Also, a mixed gas generation apparatus is provided for this purpose and a processing apparatus is provided for performing an oxide film removal processing which includes the mixed gas generation apparatus. COPYRIGHT: (C)2010,JPO&INPIT