METHOD OF MANUFACTURING THIN FILM TRANSISTOR

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor. SOLUTION: The method of manufacturing a thin film transistor includes: a first step of providing a carbon nanotube array; a second step of pulling out at least one carbon nanotube film from the carbon nanotube array;...

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Bibliographische Detailangaben
Hauptverfasser: RYO KAI, JIANG KAILI, FAN FENG-YAN
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor. SOLUTION: The method of manufacturing a thin film transistor includes: a first step of providing a carbon nanotube array; a second step of pulling out at least one carbon nanotube film from the carbon nanotube array; a third step of providing an insulating substrate and placing at least one carbon nanotube film on a surface of the insulating substrate to form a semiconducting layer; a fourth step of forming a source electrode and a drain electrode on the semiconductor layer separately from each other and electrically connecting the source electrode and the drain electrode to the semiconductor layer; a fifth step of forming an insulating layer on the semiconductor layer; and a sixth step of forming a gate electrode on a surface of the insulating layer to form a thin film transistor. COPYRIGHT: (C)2010,JPO&INPIT