ETCHING METHOD AND ETCHING DEVICE FOR SEMICONDUCTOR WAFER
PROBLEM TO BE SOLVED: To precisely etch a semiconductor wafer. SOLUTION: A mixed gas containing hydrogen fluoride and ozone is jetted to a semiconductor wafer surface, which then is monitored to control concentration of hydrogen fluoride and/or ozone on the basis of a monitoring result. An etching d...
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To precisely etch a semiconductor wafer. SOLUTION: A mixed gas containing hydrogen fluoride and ozone is jetted to a semiconductor wafer surface, which then is monitored to control concentration of hydrogen fluoride and/or ozone on the basis of a monitoring result. An etching device for semiconductor wafer includes a monitor device that monitors the semiconductor wafer surface, a nozzle jetting the mixed gas containing the hydrogen fluoride and ozone, and an adjuster adjusting the concentration of the hydrogen fluoride and/or the ozone. COPYRIGHT: (C)2010,JPO&INPIT |
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